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| Gunter Semiconductor GmbH N Channel High voltage, Power MOSFET GFCG20 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150 Operating Temperature * Fast Switching * Fully Avalanche Rated * High breakdown voltage Mechanical Data: D11 Dimension 3.56mm x 3.63mm Thickness: 480 m Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 5 mil Al Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25 Symbol V(BR)DSS RDS(ON) ID@25 ID@100 Tj Limit Unit Test Conditions VGS=0V, ID=250 VGS=10V, ID=0.84 VGS=10V VGS=10V 1000 11.5 1.4 0.86 -55~150 -55~150 V A A TSTR Target Device: IRFBG20 TO-220AB PD 54 W @Tc=25 |
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